Development of High-Performance Detector Technology for UV and IR Applications

Sensing and imaging for ultraviolet (UV) and infrared (IR) bands has many applications for NASA, defense, and commercial systems. Recent work has involved developing UV avalanche photodiode (UVAPD) arrays with high gain for high resolution imaging. Various GaN/AlGaN p-i-n UV-APDs have been fabricated from epitaxial structures grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates with avalanche gains greater than 5105, and high responsivities. Similarly, the IR spectral band is useful for measuring ocean temperatures, atmospheric aerosols, forest fires, etc. We are also developing room temperature operating graphene-enhanced PbSe midwave infrared (MWIR) detectors and focal plane arrays (FPAs). These compact and low-cost MWIR sensors can benefit various NASA remote sensing applications. Here we present recent results from these high performance UV- and IR-band detector and FPA technologies

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications

Development of High-Performance Graphene-HgCdTe Detector Technology for Mid-Wave Infrared Applications

A high-performance graphene-based HgCdTe detector technology is being developed for sensing over the mid-wave infrared (MWIR) band for NASA Earth Science, defense, and commercial applications. This technology involves the integration of graphene into HgCdTe photodetectors that combines the best of both materials and allows for higher MWIR(2-5 m) detection performance compared to photodetectors using only HgCdTe material. The interfacial barrier between the HgCdTe-based absorber and the graphene layer reduces recombination of photogenerated carriers in the detector. The graphene layer also acts as high mobility channel that whisks away carriers before they recombine, further enhancing the detector performance. Likewise, HgCdTe has shown promise for the development of MWIR detectors with improvements in carrier mobility and lifetime. The room temperature operational capability of HgCdTe-based detectors and arrays can help minimize size, weight, power and cost for MWIR sensing applications such as remote sensing and earth observation, e.g., in smaller satellite platforms. The objective of this work is to demonstrate graphene-based HgCdTe room temperature MWIR detectors and arrays through modeling, material development, and device optimization. The primary driver for this technology development is the enablement of a scalable, low cost, low power, and small footprint infrared technology component that offers high performance, while opening doors for new earth observation measurement capabilities

Development of High Performance Detector Technology for UV and Near IR Applications

Sensing and imaging for ultraviolet (UV) and nearinfrared (NIR) bands has many applications forNASA, defense, and commercial systems. Recentwork has involved developing UV avalanchephotodiode (UV-APD) arrays with high gain for highresolution imaging. Various GaN/AlGaN p-i-n (PIN)UV-APDs have been fabricated from epitaxialstructures grown by MOCVD on GaN substrates withavalanche gains higher than 5 x 10(exp 5), and significantlyhigher responsivities. Likewise, the SiGe materialsystem allows the demonstration of high-performancedetector array technology that covers the 0.5 to 1.7 mwavelength range for visible and NIR bands ofinterest. We have utilized SiGe fabrication technologyto develop Ge based PIN detector devices on 300 mmSi wafers. We will discuss the theoretical andexperimental results from electrical and opticalcharacterization of the detector devices with variousn+ region doping concentrations to demonstrate low dark currents below 1 uA at -1 V and high photocurrent. Recent results from these detectorarrays for UV and NIR detection will be presented

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electro-optical/IR applications

Blood Cholinesterases from Washington State Orchard Workers

Court-ordered monitoring of blood cholinesterases (ChEs) from orchard workers in Washington State is underway. In 2008, the mean red blood cell acetylcholinesterase (AChE, EC 3.1.1.7) activity was 9.65 ± 1.11 μmoles/min/ml (n = 1,793) and the mean serum (BChE, 3.1.1.6) activity was 5.19 ± 0.90 μmoles/min/ml (n = 1,811). Determinations were made using the Ellman assay and automated equipment of Pathology Associates Medical Laboratories (PAML), Spokane, Washington

Zero Frequency Current Noise for the Double Tunnel Junction Coulomb Blockade

We compute the zero frequency current noise numerically and in several limits analytically for the coulomb blockade problem consisting of two tunnel junctions connected in series. At low temperatures over a wide range of voltages, capacitances, and resistances it is shown that the noise measures the variance in the number of electrons in the region between the two tunnel junctions. The average current, on the other hand, only measures the mean number of electrons. Thus, the noise provides additional information about transport in these devices which is not available from measuring the current alone.Comment: 33 pages, 10 figure

Troponin and BNP are markers for subsequent non-ischaemic congestive heart failure:the Caerphilly Prospective Study (CaPS)

Objective: To examine the long-term predictive value of 28 biomarkers for subsequent non-ischaemic congestive heart failure (CHF) and separately for other cardiovascular outcomes (myocardial infarction (MI) and stroke). Methods: The Caerphilly Prospective Study recruited 2171 men aged 55–69 years from the general population in 1989–1993; men were screened for evidence of cardiovascular disease (CVD) and followed for clinical cardiovascular events. Fasting blood samples were stored at −70°C until assayed for novel biomarkers in 2010– 2013. A competing risks proportional hazards regression analysis was used to estimate subhazard ratios (SHRs) for each biomarker for each cardiovascular outcome. Results: During follow-up (average 13 years), only new, initial events were evaluated in the whole cohort: 584 MIs, 313 strokes and 261 episodes of CHF (not associated with acute MI). In a subcohort of men who had no clinical history or evidence of CVD at baseline examination (n=1279) those in the top third of the distributions of troponin and B-type natriuretic peptide (BNP) showed a threefold increase in risk for subsequent CHF as a first event after adjustment for all conventional risk factors (SHRs 3.37, 95%CI 1.39 to 8.14 and 3.23, 95%CI 1.45 to 7.23), respectively, in contrast to moderate elevations in risk for acute MI (troponin SHR 1.63, 95%CI 1.10 to 2.41) and for stroke (BNP SHR 1.75 95%CI 1.06 to 2.88). Conclusion: Troponin and BNP could be considered as potentially useful screening tools to detect subjects without prior CVD at increased risk of developing CHF in subsequent years in addition to having lesser roles for predicting subsequent MI (troponin) or stroke (BNP)